Achieving Steady and Stable Energy from AlGaAsGaAs Solar Cells
The hetero junction operating as a solar cell is based on n GaAs p GaAs p Al0.75Ga0.25As. This paper investigates the influence of radiation electron ray on layers of hetero-junction AlGaAsGaAs. Long term operation in the radiation zone degrades solar cell power operating parameters and reduces overall cell’s life. The impact of radiation electron ray has been analyzed with various doses on layers of the AlGaAsGaAs hetero junction. V-A characteristics and parameters such as the photocurrent density (Jsc), voltage at open circuit (Voc) and energy conversion efficiency ( (η), are evaluated for different doses of electron radiations. It is shown that current and voltage decrease when irradiation doses increase. Further, Jsc and η parameters decrease proportionally to the increase of the electron radiation doses whereas Voc is only slightly decreased.
Keywords:solar cells, hetero junction, electron rays, V-I characteristics, steady and stable energy
A. Luque, S. Hegedus, Handbook of photovoltaic science and engineering, John Wiley and Sons, 2003 DOI: https://doi.org/10.1002/0470014008
G. W. Crabtree, N. S. Lewis, “Solar energy conversion”, Physics Today, 2007, Vol. 60, pp. 37-42, 2007 DOI: https://doi.org/10.1063/1.2718755
R. M. Nault, Basic research needs for solar energy utilization, Argonne National Laboratory, 2005
B. Burnett, The basic physics and design of III-V multijunction solar cells, U.S. Department of Energy National Center for Photovoltaics, 2002
F. Dimroth et al., “Next generation GaInP/GaInAs/Ge multi-junction space solar cells”, Proc. 17th Photo-voltaic European Conference, WIP-Munich and ETZ-Florence, 2001
V. M. Andreev, V. R. Larionov, V. D. Rumyantsev, O. M. Fedorova, Sh. Sh. Shamukhamedov, “pAlGaAs-pGaAs-nGaAs solar cells with efficiencies of 19 percent at AM 0 and 24 percent at AM 1.5”, Pis'ma v Zhurnal Tekhnicheskoi Fiziki, Vol. 9, pp. 1251-1254, 1983
R. Sahai, D. D. Edivall, J. S. Harris, “High efficiency AlGaAs/GaAs concentrator solar cells”, Appl. Phys. Lett, Vol. 34, pp. 147-149, 1979 DOI: https://doi.org/10.1063/1.90708
V. M. Andreev, B. V Egorov, V. M. Lantratov, V. D. Rumyantsev, Sh. Sh. Shamukhamedov, “Solar heterophotocells with increased p-n junction depth”, Zhurnal Tekhnicheskoi Fiziki, Vol. 53, pp. 1658-1660, 1983
G. H. Walker, E. J. Conway, “Short Circuit Current Change in Electron Irradiated GaAlAs/GaAs Solar Cells”, Proc/Intern, Solar Energy Soc. Cong.-N.Y, Pergamon Press, pp. 575-579, 1978.
B. V. Egorov, V. M. Lantratov, S. I. Troshkov, “Analysis of dark characteristics of solar cells on the basis of heterojunction AlGaAs/GaAs”, In Coll.of Abst. 111 of USSR Conf. on Physical Processes in Semiconductor Heterojunctions. Odessa, Vol. 1, pp. 200-202, 1982
How to Cite
MetricsAbstract Views: 415
PDF Downloads: 122
Authors who publish with this journal agree to the following terms:
- Authors retain the copyright and grant the journal the right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) after its publication in ETASR with an acknowledgement of its initial publication in this journal.