Growth Mode Study of MgCl2 on Ti (0001) and SiO2 under Ultra High Vacuum by XPS

Authors

  • S. Karakalos FORTH/Institute of Chemical Engineering and High Temperature Chemical Processes and Department of Chemical Engineering, University of Patras, Greece
Volume: 2 | Issue: 6 | Pages: 291-294 | December 2012 | https://doi.org/10.48084/etasr.231

Abstract

The growth mode of MgCl2 on Ti (0001) and on SiO2 grown on Si (100) was investigated by X-ray Photoelectron Spectroscopy (XPS) under UHV conditions. Magnesium chloride grows on both Ti (0001) single crystal and SiO2 following the Frank-van der Merve, (FM) growth mode.

Keywords:

growth mode, MgCl2, Ti(0001), SiO2, UHV, XPS

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References

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How to Cite

[1]
S. Karakalos, “Growth Mode Study of MgCl2 on Ti (0001) and SiO2 under Ultra High Vacuum by XPS”, Eng. Technol. Appl. Sci. Res., vol. 2, no. 6, pp. 291–294, Dec. 2012.

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